Title :
Ultra high efficiency microwave power amplifier for wireless power transmission
Author :
Honjo, Kazuhiko ; Ishikawa, Ryo ; Takayama, Yoichiro
Author_Institution :
Adv. Wireless Commun. Res. Center, Univ. of Electro-Commun., Chofu, Japan
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Realizing ultra-high-efficiency power amplifiers operating at 5.8 GHz is a key issue for wireless power transmission such as space solar-power satellite systems and wireless smart-grid short-distance power supply systems. To achieve ultra-high efficiency, current and voltage waveform control is indispensable to eliminate power dissipations at the harmonic frequencies and to keep a balance between the supplied DC power and the 5.8-GHz output power. This paper reports optimized design techniques, including class-F, inverse class-F, and reactive harmonic load amplifiers. The developed GaN HEMT amplifier delivered a record-high drain efficiency of 90% and a power-added efficiency (PAE) of 79%.
Keywords :
gallium compounds; high electron mobility transistors; inductive power transmission; microwave power amplifiers; GaN; HEMT amplifier; current waveform control; frequency 5.8 GHz; inverse class-F; power-added efficiency; reactive harmonic load amplifiers; space solar-power satellite systems; ultrahigh efficiency microwave power amplifier; voltage waveform control; wireless power transmission; wireless smart-grid short-distance power supply systems; Gallium nitride; HEMTs; Harmonic analysis; Power amplifiers; Power generation; Power system harmonics; Wireless communication; GaN HEMT; High Efficiency Amplifier; Wireless Power Transmission; class-F; inverse class-F;
Conference_Titel :
Microwave Conference (EuMC), 2012 42nd European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2215-7
Electronic_ISBN :
978-2-87487-026-2