A 30W, 46% PAE S-band GaN HEMT MMIC power amplifier for radar applications

Author

Jardel, O. ; Olivier, Michel ; Lancereau, D. ; Aubry, Raphael ; Chartier, E. ; Sarazin, N. ; Di Forte Poisson, M. ; Piotrowicz, S. ; Stanislawiak, M. ; Rimbert, D. ; Delage, S.L. ; Eudeline, Philippe

Author_Institution

III-V Lab., Alcatel-Thales, Marcoussis, France

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1019

Lastpage

1022

Abstract

This paper deals with the performances of 30 W GaN HEMT MMIC power amplifiers designed for Radar applications in S-band. These amplifiers deliver 30 W, 46% PAE with ~20 dB power gain in the [2.7 - 3.7 GHz] frequency band, and 34W, 50% PAE with ~20.5 dB power gain in the [2.9 - 3.5GHz] frequency band, in pulsed conditions (50μs/10%). The device processing and the transistor performances are presented, as well as the design and the characterizations of the amplifiers. Pulse to pulse stability measurements were also carried out in order to evaluate their behavior under radar waveforms constraints.

Keywords

MMIC power amplifiers; gallium compounds; high electron mobility transistors; microwave measurement; microwave transistors; radar applications; wide band gap semiconductors; GaN; S-band HEMT MMIC power amplifier; efficiency 46 percent; frequency 2.7 GHz to 3.7 GHz; gain 20 dB; gain 20.5 dB; power 30 W; power 34 W; pulse to pulse stability measurements; radar applications; transistor performances; Gain; Gallium nitride; MMICs; Power amplifiers; Stability analysis; Thermal stability; Transistors; Amplifier; GaN HEMT; S-Band; pulse to pulse stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2012 42nd European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2215-7

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6459166