Title :
Transmission line with integrated symmetrical 1-kV HBM DC - 100 GHz ESD protection in advanced CMOS technologies
Author :
Lim, Taegu ; Jimenez, Joaquin ; Benech, Ph ; Fournier, Jacques ; Galy, Ph
Author_Institution :
STMicroelectron., Crolles, France
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Advanced CMOS technologies provide an easier way to realize radio-frequency integrated circuits (RFICs). However, transistor gates are getting smaller and electrostatic discharges (ESD) issues become more significant. Unfortunately, ESD protections parasitic capacitance limits the operating bandwidth of the RFICs. ESD protection size dimensions are also an issue to protect RFICs. This paper presents for the first time an ESD solution (DC-100 GHz) able to be implemented in an I/O pad to protect RFICs in advanced CMOS technologies.
Keywords :
CMOS integrated circuits; UHF integrated circuits; electrostatic discharge; field effect MMIC; transmission lines; ESD protection parasitic capacitance; ESD protection size dimensions; RFIC; advanced CMOS technology; electrostatic discharges; frequency 0 GHz to 100 GHz; integrated symmetrical HBM DC ESD protection; radiofrequency integrated circuits; transistor gates; transmission line; voltage 1 kV; CMOS integrated circuits; Electrostatic discharges; Power transmission lines; Propagation losses; Radio frequency; Radiofrequency integrated circuits; Reflection; Electrostatic discharges (ESD); advanced CMOS technology; integrated; radio-frequency integrated circuit (RFIC); transmission lines;
Conference_Titel :
Microwave Conference (EuMC), 2012 42nd European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2215-7
Electronic_ISBN :
978-2-87487-026-2
