Title :
Dual-band Class-ABJ AlGaN/GaN high power amplifier
Author :
Carrubba, V. ; Maroldt, S. ; Musser, M. ; Walcher, H. ; Schlechtweg, Michael ; Quay, Ruediger ; Ambacher, Oliver
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
This paper presents a dual-band multiharmonic Class-ABJ high power amplifier (PA) realized in AlGaN/GaN technology. In the Class-ABJ theory power and efficiency are theoretically maintained constant for the wide band spectrum frequency due to the ability to accommodate simultaneous fundamental and harmonic reactive terminations. Here it will be shown that by using the Class-ABJ theory, it is possible to optimize power, gain and efficiency for different frequency bands in a high PA design. The realized Class-ABJ power amplifier delivers drain efficiency greater than 55% with output power and gain greater than 42.4-44.4 dBm and 10-11 dB respectively for the two frequency bands 2.05-2.22 GHz and 2.45-2.58 GHz at around 2-3 dB of compression level.
Keywords :
III-V semiconductors; UHF power amplifiers; aluminium compounds; gallium compounds; wide band gap semiconductors; AlGaN-GaN; band spectrum frequency; class-ABJ theory power; dual-band multiharmonic class-ABJ high power amplifier; frequency 2.05 GHz to 2.22 GHz; frequency 2.45 GHz to 2.58 GHz; harmonic reactive terminations; high PA design; Aluminum gallium nitride; Gain; Gallium nitride; Harmonic analysis; Impedance; Power amplifiers; Power generation; Class-J; GaN; broadband amplifiers; high power amplifiers; multiband;
Conference_Titel :
Microwave Conference (EuMC), 2012 42nd European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2215-7
Electronic_ISBN :
978-2-87487-026-2
