Dual-band Class-ABJ AlGaN/GaN high power amplifier

Author

Carrubba, V. ; Maroldt, S. ; Musser, M. ; Walcher, H. ; Schlechtweg, Michael ; Quay, Ruediger ; Ambacher, Oliver

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1015

Lastpage

1018

Abstract

This paper presents a dual-band multiharmonic Class-ABJ high power amplifier (PA) realized in AlGaN/GaN technology. In the Class-ABJ theory power and efficiency are theoretically maintained constant for the wide band spectrum frequency due to the ability to accommodate simultaneous fundamental and harmonic reactive terminations. Here it will be shown that by using the Class-ABJ theory, it is possible to optimize power, gain and efficiency for different frequency bands in a high PA design. The realized Class-ABJ power amplifier delivers drain efficiency greater than 55% with output power and gain greater than 42.4-44.4 dBm and 10-11 dB respectively for the two frequency bands 2.05-2.22 GHz and 2.45-2.58 GHz at around 2-3 dB of compression level.

Keywords

III-V semiconductors; UHF power amplifiers; aluminium compounds; gallium compounds; wide band gap semiconductors; AlGaN-GaN; band spectrum frequency; class-ABJ theory power; dual-band multiharmonic class-ABJ high power amplifier; frequency 2.05 GHz to 2.22 GHz; frequency 2.45 GHz to 2.58 GHz; harmonic reactive terminations; high PA design; Aluminum gallium nitride; Gain; Gallium nitride; Harmonic analysis; Impedance; Power amplifiers; Power generation; Class-J; GaN; broadband amplifiers; high power amplifiers; multiband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2012 42nd European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2215-7

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6459243