Highly integrated S and C-band internally-matched Quasi-MMIC power GaN devices

Author

Camiade, M. ; Bouw, D. ; Mouginot, G. ; Auvray, F. ; Alleaume, P.F. ; Floriot, D. ; Favede, L. ; Thorpe, Julie ; Stieglauer, H.

Author_Institution

United Monolithic Semicond., Villebon-sur-Yvette, France

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1023

Lastpage

1026

Abstract

This paper presents recent results on highly integrated internally-matched Gallium Nitride transistors in S and C-band. The concept and the advantages of “Quasi MMIC” devices are described, showing the high potentialities for performance improvements and cost reductions. Using Gallium Arsenide based passive MMICs for input and/or output matching, more than 50W has been obtained at S-band with more than 55% PAE from 2.9GHz to 3.5GHz and more than 45% PAE at C-band @ 6.2GHz.

Keywords

III-V semiconductors; MMIC; UHF field effect transistors; UHF integrated circuits; gallium compounds; power field effect transistors; power integrated circuits; wide band gap semiconductors; C-band internally-matched quasiMMIC power devices; GaN; frequency 2.9 GHz to 3.5 GHz; frequency 6.2 GHz; gallium arsenide based passive MMIC; highly integrated S-band internally-matched quasiMMIC power devices; highly integrated internally-matched gallium nitride transistors; Dielectric constant; Gallium arsenide; Gallium nitride; Impedance matching; MMICs; Substrates; Transistors; GaAs; GaN; MMIC; PAE; PCB;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2012 42nd European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2215-7

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6459249