A 20dBm E-band power amplifier in SiGe BiCMOS technology

Author

Yishay, R.B. ; Carmon, R. ; Katz, O. ; Sheinman, B. ; Elad, Danny

Author_Institution

IBM Haifa Res. Lab., Haifa, Israel

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1079

Lastpage

1082

Abstract

This paper presents a fully integrated 71-76GHz power amplifiers (PA) fabricated in a 0.12μm SiGe BiCMOS technology. The PA employs five common-emitter stages with on-chip power combining to achieve power gain of 21dB, 17.6dBm output power at 1dB compression, and saturated power of 20.1dBm. The modified Wilkinson combiner that was used shows 0.5dB insertion loss. Small signal characteristics of the amplifier show peak gain at 72GHz with 3dB bandwidth of 17GHz (24%). The PA´s bias is applied using digitally adjustable PTAT bias circuits and it consumes quiescent currents of 140mA from a 2V supply and 280mA at 1dB compression.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; field effect MIMIC; millimetre wave power amplifiers; power combiners; semiconductor materials; BiCMOS technology; E-band power amplifier; SiGe; common-emitter stages; current 140 mA; digitally adjustable PTAT bias circuits; frequency 71 GHz to 76 GHz; gain 21 dB; loss 0.5 dB; modified Wilkinson combiner; on-chip power combining; size 0.12 mum; small signal characteristics; voltage 2 V; voltage 280 mV; Bandwidth; BiCMOS integrated circuits; Power amplifiers; Power generation; Power measurement; Silicon germanium; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2012 42nd European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2215-7

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6459375