Title :
A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology
Author :
Schwantuschke, Dirk ; Bruckner, P. ; Quay, Ruediger ; Mikulla, Michael ; Ambacher, Oliver ; Kallfass, I.
Author_Institution :
High Freq. Device & Circuits, Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
The design and manufacture of a three-stage broadband power amplifier is presented in this paper. The amplifier MMIC is realized using AlGaN/GaN HEMTs with a gate-length of 100 nm in a grounded coplanar transmission line technology. A small-signal gain of over 20 dB was measured in the frequency range from 38 to 62 GHz (U-band) for the designed amplifier. This corresponds to a very high small-signal bandwidth of over 48%. Related to the current-gain cutoff frequency, the bandwidth of the amplifier is 30% of fT and the gain-bandwidth-product is approximately five times fT. Furthermore, a high continuous-wave saturated output power of 25.8 dBm (380 mW) and a high saturated power density of over 1 W/mm in the output stage are provided by the MMIC.
Keywords :
HEMT integrated circuits; III-V semiconductors; MIMIC; MMIC power amplifiers; aluminium compounds; coplanar transmission lines; gallium compounds; millimetre wave power amplifiers; wide band gap semiconductors; wideband amplifiers; AlGaN-GaN; HEMT technology; U-band broadband power amplifier MMIC; current-gain cutoff frequency; frequency 38 GHz to 62 GHz; grounded coplanar transmission line technology; high saturated power density; power 380 mW; size 100 nm; small-signal gain; three-stage broadband power amplifier; Aluminum gallium nitride; Broadband amplifiers; Gain; Gallium nitride; HEMTs; MMICs; Power amplifiers;
Conference_Titel :
Microwave Conference (EuMC), 2012 42nd European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2215-7
Electronic_ISBN :
978-2-87487-026-2
