Title :
High efficient power receiver IC with load modulator for wireless resonant power transfer
Author :
Dong-Zo Kim ; Ki Young Kim ; Jinsung Choi ; Young-Ho Ryu ; Yun-Kwon Park ; Sangwook Kwon ; Young-jin Moon ; Changsik Yoo
Author_Institution :
Future IT Reasearch Center, Samsung Adv. Inst. of Technol., Yongin, South Korea
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
The wireless power receiver with load modulator for inband communication is proposed. The MOS transistor is used for the load modulator of inband communication and the proposed wireless power receiver is implemented with 0.35μm 2P4M BCDMOS technology. The efficiency of the wireless power receiver is obtained as high as 80% for ~3W pickup at 13.56 MHz of transfer frequency. We have verified the performance of the inband communication for the WPT system while a mobile device is in charging.
Keywords :
CMOS integrated circuits; MOSFET; modulators; power transmission; 2P4M BCDMOS technology; MOS transistor; WPT system; frequency 13.56 MHz; inband communication; load modulator; mobile device; power 3 W; power receiver IC; size 0.35 mum; transfer frequency; wireless power receiver; wireless resonant power transfer; Bridge circuits; Magnetic resonance; Mobile handsets; Modulation; Receivers; Rectifiers; Wireless communication; DC-DC Converter; Load Modulator; Magnetic Resonance Coupling; Rectifier;
Conference_Titel :
Microwave Conference (EuMC), 2012 42nd European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2215-7
Electronic_ISBN :
978-2-87487-026-2
