High efficient power receiver IC with load modulator for wireless resonant power transfer

Author

Dong-Zo Kim ; Ki Young Kim ; Jinsung Choi ; Young-Ho Ryu ; Yun-Kwon Park ; Sangwook Kwon ; Young-jin Moon ; Changsik Yoo

Author_Institution

Future IT Reasearch Center, Samsung Adv. Inst. of Technol., Yongin, South Korea

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

416

Lastpage

419

Abstract

The wireless power receiver with load modulator for inband communication is proposed. The MOS transistor is used for the load modulator of inband communication and the proposed wireless power receiver is implemented with 0.35μm 2P4M BCDMOS technology. The efficiency of the wireless power receiver is obtained as high as 80% for ~3W pickup at 13.56 MHz of transfer frequency. We have verified the performance of the inband communication for the WPT system while a mobile device is in charging.

Keywords

CMOS integrated circuits; MOSFET; modulators; power transmission; 2P4M BCDMOS technology; MOS transistor; WPT system; frequency 13.56 MHz; inband communication; load modulator; mobile device; power 3 W; power receiver IC; size 0.35 mum; transfer frequency; wireless power receiver; wireless resonant power transfer; Bridge circuits; Magnetic resonance; Mobile handsets; Modulation; Receivers; Rectifiers; Wireless communication; DC-DC Converter; Load Modulator; Magnetic Resonance Coupling; Rectifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2012 42nd European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2215-7

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6459428