Generation of High Speed Polarization Modulated Data Using a Monolithically Integrated Device

Author

Naeem, Muhammad A. ; Haji, Mohsin ; Holmes, Barry M. ; Hutchings, David C. ; Marsh, John H. ; Kelly, Anthony E.

Author_Institution

Dept. of Electr. Eng., Univ. of the Punjab, Lahore, Pakistan

Volume

21

Issue

4

fYear

2015

fDate

July-Aug. 2015

Firstpage

207

Lastpage

211

Abstract

We report on the generation of high speed polarization modulated data via direct electrical binary data injection to the phase shifter section of a monolithically integrated laser diode integrated with a polarization controller. The device is fabricated on standard InP/AlGaInAs multiple quantum-well material and consists of a semiconductor laser, a passive polarization mode convertor, and an active differential phase-shifter section. We demonstrate the generation of 300 Mb/s polarization shift keyed data.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; light polarisation; optical phase shifters; semiconductor lasers; semiconductor quantum wells; InP-AlGaInAs; active differential phase-shifter section; direct electrical binary data injection; high speed polarization modulated data generation; monolithically integrated device; monolithically integrated laser diode; passive polarization mode convertor; phase shifter section; polarization controller; semiconductor laser; standard InP/AlGaInAs multiple quantum-well material; Educational institutions; Modulation; Optical polarization; Optical waveguides; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers; Integrated circuit fabrication; Modulation, Phase shifters; Polarization; modulation; phase shifters; polarization;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2014.2375492

Filename

6967752