Title :
Method for determination of capture velocity of charge carriers into quantum well in semiconductor laser
Author :
Sokolova, Z.N. ; Bakhvalov, K.V. ; Lyutetskiy, A.V. ; Pikhtin, N.A. ; Tarasov, I.S. ; Asryan, L.V.
Author_Institution :
Ioffe Phys.-Tech. Inst., St. Petersburg, Russia
Abstract :
A simple method for the determination of the capture velocity of charge carriers from a three-dimensional (3D) region (waveguide region) into a 2D region (quantum well) is proposed. The method is based on measurement of the threshold current density and internal differential quantum efficiency in a semiconductor laser structure. The method also allows determining the 2D carrier density in a quantum well, which is otherwise not easy to measure in a multilayer laser structure.
Keywords :
carrier density; current density; semiconductor lasers; semiconductor quantum wells; 2D carrier density; 2D region; capture velocity; charge carriers; internal differential quantum efficiency; quantum well; semiconductor laser; three-dimensional region; threshold current density; waveguide region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2015.0605
