Compact modeling for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding gate MOSFETs

Author

Fasarakis, N. ; Tsormpatzoglou, A. ; Tassis, Dimitrios H. ; Papathanasiou, Kostas ; Dimitriadis, C.A. ; Ghibaudo, Gerard

Author_Institution

Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece

fYear

2012

fDate

9-12 Dec. 2012

Firstpage

953

Lastpage

956

Abstract

In this work, analytical compact model for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding-gate (SG) MOSFETs is proposed. The double-gate (DG) model is extended to SG model using equivalent geometrical parameters. The developed model is described by single analytical equations valid in all regions of operation, from the subthreshold to strong inversion and from the linear to the saturation region. The results of the model are compared with the results of a numerical device simulator. The overall results reveal the very good accuracy of the proposed model, making the compact model suitable for circuit design simulation tools.

Keywords

MOSFET; numerical analysis; SG MOSFET; circuit design simulation tools; compact modeling; light doped nanoscale cylindrical surrounding gate MOSFET; model equivalent geometrical parameters; numerical device simulator; single analytical equations; transcapacitances; Capacitance; Integrated circuit modeling; Logic gates; MOSFETs; Mathematical model; Numerical models; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on

Conference_Location

Seville

Print_ISBN

978-1-4673-1261-5

Electronic_ISBN

978-1-4673-1259-2

Type

conf

DOI

10.1109/ICECS.2012.6463503

Filename

6463503