Title :
Energy-Efficient Non-Boolean Computing With Spin Neurons and Resistive Memory
Author :
Sharad, Mrigank ; Deliang Fan ; Aitken, K. ; Roy, Kaushik
Author_Institution :
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
Emerging nonvolatile resistive memory technologies can be potentially suitable for computationally expensive analog pattern-matching tasks. However, the use of CMOS analog circuits with resistive crossbar memory (RCM) would result in large power consumption and poor scalability, thereby eschewing the benefits of RCM-based computation. We explore the potential of emerging spin-torque devices for RCM-based approximate computing circuits. Emerging spin-torque switching techniques may lead to nanoscale, current-mode spintronic switches that can be used for energy-efficient analog-mode data processing. We propose the use of such low-voltage, fast-switching, magnetometallic “spin neurons” for ultralow power non-Boolean computing with RCM. We present the design of analog associative memory for face recognition using RCM, where, substituting conventional analog circuits with spin neurons can achieve ~100× lower power consumption.
Keywords :
CMOS analogue integrated circuits; content-addressable storage; current-mode circuits; face recognition; integrated circuit design; magnetoelectronics; switches; CMOS analog circuits; RCM-based approximate computing circuits; analog associative memory design; analog pattern-matching tasks; current-mode spintronic switch; energy-efficient analog-mode data processing; energy-efficient nonBoolean computing; face recognition; magnetometallic spin neurons; nanoscale switch; nonvolatile resistive memory technologies; resistive crossbar memory; spin-torque devices; spin-torque switching techniques; CMOS integrated circuits; Magnetic tunneling; Memristors; Neurons; Power demand; Resistance; Switches; Hardware; low power; magnets; memory; pattern matching;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2013.2286424