Title :
An ultra-low power current reused CMOS low noise amplifier for x-band space application
Author :
Yasami, S. ; Bayoumi, M.
Author_Institution :
Center for Adv. Comput. Studies, Univ. of Louisiana at Lafayette, Lafayette, LA, USA
Abstract :
This paper presents fully integrated ultra-low power CMOS low noise amplifier (LNA) for x-band space application by employing current reused technique. It also operates in subthreshold region to reduce power consumption significantly. The state-of-art low noise amplifier targets 10.8 GHz for x-band frequency in advanced conventional 65-nm CMOS technologies. It achieves power gain (S21) of 10 dB, noise figure (NF) of 2.9 dB, input-referred third-order intercept point (IIP3) of -9 dBm, while consumes only 125 uA and operates with supply voltage of 0.6 V which results in total power consumption of less than 80 uW.
Keywords :
CMOS analogue integrated circuits; low noise amplifiers; low-power electronics; microwave amplifiers; power consumption; CMOS technology; IIP3; LNA; X-band frequency; X-band space application; current 125 muA; current reused technique; fully integrated ultra-low power CMOS low noise amplifier; gain 10 dB; input-referred third-order intercept point; noise figure; noise figure 2.9 dB; power consumption; power gain; size 65 nm; subthreshold region; ultra-low power current reused CMOS low noise amplifier; voltage 0.6 V; CMOS integrated circuits; CMOS technology; Logic gates; Low-noise amplifiers; Noise figure; Power demand; Transistors;
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on
Conference_Location :
Seville
Print_ISBN :
978-1-4673-1261-5
Electronic_ISBN :
978-1-4673-1259-2
DOI :
10.1109/ICECS.2012.6463636
