DocumentCode :
596919
Title :
A study on MOSFET rectifiers with transistors operating in the weak inversion region
Author :
Goncalves, Hugo ; Martins, Miguel ; Fernandes, J.
Author_Institution :
Inst. Super. Tecnico, INESC-ID, Tech. Univ. Lisbon, Lisbon, Portugal
fYear :
2012
fDate :
9-12 Dec. 2012
Firstpage :
665
Lastpage :
668
Abstract :
Today´s energy harvesting circuits have to harvest energy from very weak sources demanding high sensitivity and high efficiency. In this paper it is presented a study on rectifiers used in radio frequency (RF) energy harvesting systems with transistors operating in weak-inversion region, where the losses due to reverse current become comparable to the direct (or charge) current. The study compares three rectifier topologies and makes use of all transistors terminals to improve performance, increasing the direct current and reducing the reverse current. The results show that connecting an anti-phase signal to the transistor´s gate and bulk terminals improves the rectifier´s delivered power.
Keywords :
MOSFET; energy harvesting; rectifiers; MOSFET rectifier; antiphase signal; energy harvesting circuit; radio frequency energy harvesting system; rectifier topology; transistor; weak inversion region; Capacitors; Energy harvesting; Logic gates; Mathematical model; Radio frequency; Topology; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on
Conference_Location :
Seville
Print_ISBN :
978-1-4673-1261-5
Electronic_ISBN :
978-1-4673-1259-2
Type :
conf
DOI :
10.1109/ICECS.2012.6463638
Filename :
6463638
Link To Document :
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