Title :
SkyFlash EC project: Architecture for a 1Mbit S-Flash for space applications
Author :
Arbat, A. ; Calligaro, C. ; Dayan, Vladislav ; Pikhay, Evgeny ; Roizin, Y.
Author_Institution :
RedCat Devices, Milan, Italy
Abstract :
This work presents an innovative architecture to fabricate a non volatile memory for space applications using a S-Flash memory cell. The design takes into account the different effects of the radiation that could damage the circuits and the memory cell in harsh environments. The memory cell has been developed by TowerJazz Semiconductors to be compatible with the standard 180nm CMOS process. A 1Mbit prototype has been designed using the presented architecture.
Keywords :
CMOS memory circuits; avionics; flash memories; random-access storage; CMOS process; S-flash memory cell; SkyFlash EC project; TowerJazz Semiconductors; harsh environments; innovative architecture; nonvolatile memory; space applications; CMOS integrated circuits; Computer architecture; MOSFETs; Microprocessors; Nonvolatile memory; Programming; Radiation hardening;
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on
Conference_Location :
Seville
Print_ISBN :
978-1-4673-1261-5
Electronic_ISBN :
978-1-4673-1259-2
DOI :
10.1109/ICECS.2012.6463671
