DocumentCode :
59704
Title :
Temperature-Dependent Measurements of Time-of-Flight Current Waveforms in Schottky CdTe Detectors
Author :
Suzuki, Kenji ; Sawada, Tsuyoshi ; Seto, Shinta
Author_Institution :
Hokkaido Inst. of Technol., Sapporo, Japan
Volume :
60
Issue :
4
fYear :
2013
fDate :
Aug. 2013
Firstpage :
2840
Lastpage :
2844
Abstract :
Temporal evolution of the time-of-flight current waveforms of Schottky CdTe detectors as a function of the DC bias duration has been measured at several different temperatures from 278 K to 315 K to investigate the nature of the defects responsible for the polarization phenomena. The electron transient current waveforms under the application of DC bias show polarization as evidenced by a change in the waveforms continuously from having a plateau to having a peak at the trailing edge and by the shift of the peak position to later times with an increasing DC bias duration. Three relaxation processes with time constants from less than a second to as long as hundreds of seconds at room temperature are involved in the evolution. On the basis of the observed temperature dependence of the internal electric field evolution, we have concluded that two out of three relaxation processes are attributed to the ionization of defects at 0.54 eV and 0.6 eV.
Keywords :
II-VI semiconductors; Schottky barriers; Schottky defects; cadmium compounds; chemical relaxation; ionisation; semiconductor counters; temperature measurement; wide band gap semiconductors; CdTe; DC bias duration; Schottky detectors; defect ionization; electron transient current waveforms; electron volt energy 0.54 eV; electron volt energy 0.6 eV; internal electric field evolution; polarization phenomena; relaxation processes; temperature 278 K to 315 K; temperature-dependent measurements; time-of-flight current waveforms; Current measurement; Detectors; Measurement by laser beam; Pulse measurements; Temperature dependence; Temperature measurement; Transient analysis; CdTe; polarization; time-of-flight;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2013.2251663
Filename :
6515696
Link To Document :
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