Protective circuitry developments related to MOSFET protection setup to the occurrence of electrostatic discharge phenomenon

Author

Bicleanu, P. ; Nicuta, A. ; Bargan, L. ; Salceanu, Andrei ; Postolache, Octavian

Author_Institution

Fac. of Electr. Eng., Gheorghe Asachi Tech. Univ. of Iasi, Iasi, Romania

fYear

2012

fDate

25-27 Oct. 2012

Firstpage

723

Lastpage

727

Abstract

Dealing with microelectronic industry, the Electrostatic Discharge has a significant importance regarding the failures related to the solid state devices. The paper is focused on software applications concerning the effects of electrostatic discharges on MOSFET integrated circuitry, using a dedicated computational program. We considered in our approach, some different electronic components with electrostatic discharge protective properties. Our research is useful in electronic domain to select the most adequate electronic equipments, in order to treat and reduce the effects of electrostatic discharges.

Keywords

MOSFET; electrostatic discharge; integrated circuits; protection; MOSFET integrated circuitry; MOSFET protection setup; electronic components; electronic domain; electronic equipments; electrostatic discharge protective properties; microelectronic industry; protective circuitry developments; software applications; solid state devices; Electrostatic discharges; Integrated circuit modeling; Power transmission lines; Semiconductor diodes; Testing; Transmission line measurements; TLPsystem; electronic equipment; electrostatic discharge; integrated circuit;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Power Engineering (EPE), 2012 International Conference and Exposition on

Conference_Location

Iasi

Print_ISBN

978-1-4673-1173-1

Type

conf

DOI

10.1109/ICEPE.2012.6463845

Filename

6463845