Title :
Preparation and piezoelectric analysis of the multilayer films for fbar
Author :
Lin Su ; Bao-he Yang ; Cui-ping Li
Author_Institution :
Coll. of Precision Instrum. & Opto-Electron. Eng., Tianjin Univ., Tianjin, China
Abstract :
A multilayered structure of Al/ZnO/Al/DLC for FBAR was prepared in this research, and its piezoelectric performance was measured. The results show that DLC film with high sp3 content can be prepared at room temperature by using ECR-CVD system with the power of 1200W, the total pressure of 1Pa, as well as the CH4 and Ar gas ratio of 1-9. High c-axis oriented ZnO films can be prepared with the optimized process parameters, and their performance can be further improved by annealing treatment. The piezoresponse amplitude and phase of the ZnO films were measured by using piezoresponse force microscopy (PFM). The results indicate that the ZnO film prepared at 250°C temperature has good piezoelectric performance, meeting the requirement of the piezoelectric layer for FBAR.
Keywords :
II-VI semiconductors; aluminium; annealing; chemical vapour deposition; cyclotron resonance; diamond-like carbon; multilayers; piezoelectric semiconductors; piezoelectric thin films; semiconductor thin films; wide band gap semiconductors; zinc compounds; Al-ZnO-Al-C; DLC film; ECR-CVD system; FBAR device; PFM; annealing treatment; film bulk acoustic resonator device; gas ratio; high c-axis oriented films; high sp3 content; multilayer films; multilayered structure; optimized process parameters; piezoelectric analysis; piezoelectric layer; piezoresponse amplitude; piezoresponse force microscopy; power 1200 W; pressure 1 Pa; temperature 250 degC; Electrodes; Film bulk acoustic resonators; Films; Piezoelectric polarization; Temperature measurement; X-ray scattering; Zinc oxide; FBAR; PFM; Piezoresponse; ZnO;
Conference_Titel :
Piezoelectricity, Acoustic Waves and Device Applications (SPAWDA), 2012 Symposium on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-4814-0
DOI :
10.1109/SPAWDA.2012.6464101
