Title :
LPE growth and luminescent properties of Ce doped A2SiO5:Ce (A = Lu, Gd, Y) single crystalline films
Author :
Zorenko, Yuriy ; Gorbenko, V. ; Savchyn, V. ; Voznyak, T. ; Grinyov, B. ; Sidletskiy, O. ; Fedorov, A. ; Gerasymov, Ia ; Jary, V. ; Mares, J. ; Beitlerova, A. ; Nikl, Martin
Author_Institution :
Institute of Physics, Kazimierz Wielki University in Bydgoszcz, Poland
Abstract :
The report is dedicated to development of scintillators based on the single crystalline films of Lu2SiO5 (LSO), (LuxGd1−x)2SiO5 (LGSO) and Y2SiO5 (YSO) orthosilicates grown by Liquid Phase Epitaxy (LPE) methods. We also compare the luminescent and scintillation properties of Ce doped LSO and YSO SCFs with the properties of their single crystal counterparts, growth by Czochralski method.
Keywords :
Films; Ions; Luminescence; Rough surfaces; Substrates; Surface morphology; Surface roughness; (Lu1−xGdx)2SiO5:Ce Y2SiO5:Ce; Lu2SiO5:Ce; luminescence; single crystal; single crystalline film;
Conference_Titel :
Oxide Materials for Electronic Engineering (OMEE), 2012 IEEE International Conference on
Conference_Location :
Lviv, Ukraine
Print_ISBN :
978-1-4673-4491-3
DOI :
10.1109/OMEE.2012.6464743
