Title :
Electronic excitation mediated structuring of semiconducting oxides
Author :
Museur, L. ; Anglos, D. ; Kanaev, A.
Author_Institution :
IESL - FORTH, Heraklion, Greece
Abstract :
Strong modifications of semiconducting oxides can be provoked by high-density electronic excitation above the Mott density. This regime corresponds to the manifestation of electron-hole plasma continuum. The nanostructuring of monocrystalline zinc oxide in this regime is correlated with elongation of the inter-crystalline planes and intensification of exciton photoluminescence.
Keywords :
Excitons; Laser ablation; Laser beams; Laser excitation; Radiation effects; Semiconductor lasers; Zinc oxide; ZnO; femtosecond laser processing; high-density electronic excitation; surface nanostructuring;
Conference_Titel :
Oxide Materials for Electronic Engineering (OMEE), 2012 IEEE International Conference on
Conference_Location :
Lviv, Ukraine
Print_ISBN :
978-1-4673-4491-3
DOI :
10.1109/OMEE.2012.6464819
