Title :
Some properties of thin film structures on the base of ZnO obtained by MOCVD method
Author :
Roshchina, N.M. ; Smertenko, P.S. ; Stepanov, V.G. ; Zavyalova, L.V. ; Lytvyn, O.S.
Author_Institution :
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine
Abstract :
This paper reports on the ZnO film structures obtained by MOCVD method on Si substrates. The phase composition, structure and morphology of ZnO films as well as electrophysical properties of ZnO/Si heterojunction on their base were investigated. The possible charge flow mechanisms in ZnO/Si heterojunction are discussed.
Keywords :
Films; Heterojunctions; MOCVD; Morphology; Silicon; Substrates; Zinc oxide; ZnO/Si heterojunction; current-voltage characteristics; metaloorganic chemical vapour deposition;
Conference_Titel :
Oxide Materials for Electronic Engineering (OMEE), 2012 IEEE International Conference on
Conference_Location :
Lviv, Ukraine
Print_ISBN :
978-1-4673-4491-3
DOI :
10.1109/OMEE.2012.6464843
