• DocumentCode
    597299
  • Title

    Electrophysical diagnostics of Ag/HfO2/ZnO/TiAu structures

  • Author

    Krajewski, Tomasz A. ; Smertenko, P.S. ; Luka, Grzegorz ; Wachnicki, L. ; Cherevko, A. ; Olkhovik, G. ; Zakrzewski, Adam J. ; Godlewski, Marek ; Guziewicz, Elzbieta

  • Author_Institution
    Institute of Physics, Polish Acad. of Sciences, Warsaw, Poland
  • fYear
    2012
  • fDate
    3-7 Sept. 2012
  • Firstpage
    35
  • Lastpage
    36
  • Abstract
    This paper reports on the Ag/HfO2/ZnO/TiAu Schottky structures, in which the semiconducting ZnO and HfO2 layers are obtained using the low temperature Atomic Layer Deposition (ALD) method. Basing on the thermionic emission, differential and injection approaches an optimal thickness of HfO2 capping layer for the ZnO-based diode was found to be about 2.5 nm.
  • Keywords
    Atomic layer deposition; Hafnium compounds; Junctions; Schottky barriers; Schottky diodes; Zinc oxide; ZnO-based Schottky diode; atomic layer deposition (ALD); current-voltage characteristics; differential approach;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Oxide Materials for Electronic Engineering (OMEE), 2012 IEEE International Conference on
  • Conference_Location
    Lviv, Ukraine
  • Print_ISBN
    978-1-4673-4491-3
  • Type

    conf

  • DOI
    10.1109/OMEE.2012.6464855
  • Filename
    6464855
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=597299