Title :
Crystal growth of the (Ga1−xInx)2Se3, 0.32≤x≤0.42 phase and investigation of physical properties of obtained single crystals
Author :
Ivashchenko, I.A. ; Halyan, V.V. ; Danylyuk, I.V. ; Pankevuch, V.Z. ; Davydyuk, G.Ye. ; Olekseyuk, I.D.
Author_Institution :
Department of Inorganic and Physical Chemistry, Lesya Ukrainka Volyn National University, Lutsk, Ukraine
Abstract :
The phase diagram of the Ga2Se3-In2Se3 system as investigated by differential-thermal analysis (DTA) and X-ray diffraction (XRD) method. The single crystals from the area of existence of the γ2 phase with the compositions (Ga0.6In0.4)2Se3 and (Ga0.594In0.396Er0.01)2Se3 were grown by a vertical Bridgman method. Absorption spectra of the grown crystals were studied. The estimated optical band gap is 1.95±0.01 eV. The resistance of the single crystals of (Ga0.6In0.4)2Se3 (R = 500 MΩ) and (Ga0.594In0.396Er0.01)2Se3 (R = 210 MΩ) was measured.
Keywords :
Absorption; Annealing; Crystals; Erbium; Photonic band gap; Resistance; X-ray scattering; absorption spectra; band gap; phase diagram; resistance; semiconductor; single crystal;
Conference_Titel :
Oxide Materials for Electronic Engineering (OMEE), 2012 IEEE International Conference on
Conference_Location :
Lviv, Ukraine
Print_ISBN :
978-1-4673-4491-3
DOI :
10.1109/OMEE.2012.6464856
