DocumentCode :
597301
Title :
Optical and electrical properties of ZnO thin films grown by sol-gel method
Author :
Bala, Waclaw ; Zorenko, Yu. ; Savchyn, V. ; Voznyak, T. ; Paprocki, K. ; Popielarski, P. ; Szybowicz, M.
Author_Institution :
Kazimierz Wielki University, Institute of Physics, Bydgoszcz, Poland
fYear :
2012
fDate :
3-7 Sept. 2012
Firstpage :
31
Lastpage :
32
Abstract :
The ZnO thin films have been produced on p-type Si by the dip-coating method and after deposition were heated at different temperatures in the range from 650K to 850K. The photoluminescence (PL) and cathodoluminescence (CL) measurements were carried out at temperature range 12K-350K. I-V, C-V, Q-DLTS measurements were performed on the Al/ZnO/Si/Al structures at different temperatures. The electrical response of grains, grain boundaries, and contacts of the ZnO film was obtained.
Keywords :
Annealing; Optical films; Phonons; Silicon; Temperature measurement; Zinc oxide; Luminescence; Raman spectra; Sol-gel method; Zinc Oxide; thin films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Oxide Materials for Electronic Engineering (OMEE), 2012 IEEE International Conference on
Conference_Location :
Lviv, Ukraine
Print_ISBN :
978-1-4673-4491-3
Type :
conf
DOI :
10.1109/OMEE.2012.6464857
Filename :
6464857
Link To Document :
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