DocumentCode
597301
Title
Optical and electrical properties of ZnO thin films grown by sol-gel method
Author
Bala, Waclaw ; Zorenko, Yu. ; Savchyn, V. ; Voznyak, T. ; Paprocki, K. ; Popielarski, P. ; Szybowicz, M.
Author_Institution
Kazimierz Wielki University, Institute of Physics, Bydgoszcz, Poland
fYear
2012
fDate
3-7 Sept. 2012
Firstpage
31
Lastpage
32
Abstract
The ZnO thin films have been produced on p-type Si by the dip-coating method and after deposition were heated at different temperatures in the range from 650K to 850K. The photoluminescence (PL) and cathodoluminescence (CL) measurements were carried out at temperature range 12K-350K. I-V, C-V, Q-DLTS measurements were performed on the Al/ZnO/Si/Al structures at different temperatures. The electrical response of grains, grain boundaries, and contacts of the ZnO film was obtained.
Keywords
Annealing; Optical films; Phonons; Silicon; Temperature measurement; Zinc oxide; Luminescence; Raman spectra; Sol-gel method; Zinc Oxide; thin films;
fLanguage
English
Publisher
ieee
Conference_Titel
Oxide Materials for Electronic Engineering (OMEE), 2012 IEEE International Conference on
Conference_Location
Lviv, Ukraine
Print_ISBN
978-1-4673-4491-3
Type
conf
DOI
10.1109/OMEE.2012.6464857
Filename
6464857
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