Title :
Femtosecond relaxation dynamics of photo-excited carriers in Si nanoparticles embedded in SiO2 matrix
Author :
Kadan, V.M. ; Dan´ko, V.A. ; Indutnyi, I.Z. ; Dmitruk, I.M. ; Korenyuk, P.I. ; Blonskyi, I.V.
Author_Institution :
Institute of Physics of NAS of Ukraine, Kyiv, Ukraine
Abstract :
We show that full saturation of the interface-located trap states by the photogenerated carriers under the femtosecond excitation in nano-Si/SiO2 results in the increase of the free carriers´ lifetime and the quantum yield of the luminescence. The observed increase of the quantum yield is unexpected, in contrast to the commonly observed decrease under nanosecond excitation.
Keywords :
Laser excitation; Nanocrystals; Photoluminescence; Shape; Silicon; Time domain analysis; femtosecond excitation; nano-Si/SiO2; pump-probe spectroscopy; trap states;
Conference_Titel :
Oxide Materials for Electronic Engineering (OMEE), 2012 IEEE International Conference on
Conference_Location :
Lviv, Ukraine
Print_ISBN :
978-1-4673-4491-3
DOI :
10.1109/OMEE.2012.6464891
