Implementation of High-Power GaN-Based LEDs With a Textured 3-D Backside Reflector Formed by Inserting a Self-Assembled ${\rm SiO}_{2}$ Nanosphere Monolayer

Enhanced light extraction efficiency (LEE) of high-power GaN-based light-emitting diodes (LEDs) is achieved by inserting a self-assembled SiO₂ nanosphere monolayer between the substrate and backside reflectors. Due to the presence of concave surfaces and photonic crystal-like air voids, downward photons emitted from multiple quantum well toward 3-D backside reflectors, could be reflected, scattered, and redirected into arbitrary directions for light extraction. These textured 3-D backside reflectors with an SiO₂ nanosphere monolayer could also extract the lateral light inside device into the normal direction and improve LEE. As compared with a conventional LED without a backside reflector and an LED with a planar hybrid backside reflector, at 350 mA, the studied device with a 3-D hybrid backside reflector exhibits 136.4% (165%) and 23.6% (27.4%) enhancements in light output power (luminous flux) without the degradation of electrical properties. Higher light intensities in light emission mapping image and far-field pattern are also obtained. These results show that a textured 3-D backside reflector could be easily formed by inserting an SiO₂ nanosphere monolayer to significantly enhance the performance of high-power GaN-based LEDs.