Screen-Printed Si Paste for Localized B Doping in a Back Surface Field

Author

Juan Hong ; Wei Wang ; Bao Shi ; Wei Zhang

Author_Institution

Coll. of Mech. & Electr. Eng., Nanjing Univ. of Aeronaut. & Astronaut., Nanjing, China

Volume

36

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

8

Lastpage

10

Abstract

In this letter, Si paste formed by p-type Si nanoparticles (NPs) and an organic solvent is used as the source of B. Si NPs with a diameter of ~30 nm are prepared using the pulsed electrical discharge method. The preprocessed Si wafers (after laser opening) are used as the substrate. Si paste with different percentages of Si NPs is screen-printed above the openings. B atoms diffuse into Si wafers through annealing. Uniform doping profiles are observed under a laser scanning microscope. The B doping is successful as evidenced by secondary ion mass spectroscopy.

Keywords

annealing; boron alloys; discharges (electric); nanoparticles; semiconductor doping; silicon alloys; NPs; Si:B; annealing; back surface field; laser scanning microscope; localized boron doping; organic solvent; p-type silicon nanoparticles; pulsed electrical discharge method; screen-printed silicon paste; secondary ion mass spectroscopy; uniform doping profiles; Annealing; Doping; Films; Lasers; Photovoltaic cells; Silicon; Solvents; B doping; Screen-printed; Si paste; screen-printed;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2374875

Filename

6967777