ZnO nanowires lift-off from silicon substrate embedded in flexible films

Author

Ray-Hua Horng ; Hung-I Lin ; Dong-Sing Wuu

Author_Institution

Inst. Grad. of Precision Eng., Nat. Chung Hsing Univ., Taichung, Taiwan

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

1

Lastpage

3

Abstract

A novel lifting-off method of ZnO nanowires from Si substrate and embedded in flexible films have been proposed in this study. Compared with peeling-off method by polydimethyl- siloxane (PDMS), the embedded ZnO nanowires may suffer from external forces to change the dimension. The shape of ZnO nanowires remained almost unchanged after using the novel lifting-off process. Flexible films served as the secondary and flexible substrate after ZnO nanowires transferring from the Si substrate. The lift-off fabrication is a candidate for Si substrate recycling usage and for large area fabrication.

Keywords

II-VI semiconductors; flexible electronics; nanofabrication; nanowires; polymer blends; recycling; wide band gap semiconductors; zinc compounds; Si; Si substrate recycling usage; ZnO; ZnO nanowire shape; ZnO nanowires; flexible films; flexible substrate; large area fabrication; lift-off fabrication; lifting-off method; peeling-off method; polydimethylsiloxane; secondary substrate; silicon substrate; Epoxy resins; Films; Gold; Nanowires; Silicon; Substrates; Zinc oxide; PDMS; ZnO; lift-off and flexible film; nanowires;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6465936

Filename

6465936