Microstructure and piezoelectric properties of c-BN Nano-films deposited on Si by RF sputtering for piezoelectric devices

Author

Wang Fang ; Baohe, Y. ; Wei Jun ; Zhang Kailiang

Author_Institution

Tianjin Univ., Tianjin, China

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

49

Lastpage

51

Abstract

In this paper, boron nitride (BN) films were deposited on silicon substrates by RF magnetron sputtering under different bias voltages. Microstructure and piezoelectric properties of BN films were characterized by FTIR, SEM, AFM and PFM. The results show that surface of films are of lower roughness, while the highest cubic phase volume fraction appeared (about 95%) under bias voltage 120V. And the deposited c-BN films are of apparent piezoelectric properties both in plane and vertical direction by PFM figures.

Keywords

atomic force microscopy; boron compounds; nanoelectronics; pulse frequency modulation; scanning electron microscopy; semiconductor thin films; sputtering; AFM; FTIR; PFM; RF magnetron sputtering; SEM; c-boron nitride nanofilms; cubic phase volume fraction; different bias voltages; microstructure; piezoelectric devices; piezoelectric properties; voltage 120 V; Films; Morphology; Piezoelectric devices; Silicon; Surface morphology; Surface topography; Surface treatment; FTIR and PFM; bias voltage; c-BN; sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6465950

Filename

6465950