Title :
Microstructure and piezoelectric properties of c-BN Nano-films deposited on Si by RF sputtering for piezoelectric devices
Author :
Wang Fang ; Baohe, Y. ; Wei Jun ; Zhang Kailiang
Author_Institution :
Tianjin Univ., Tianjin, China
Abstract :
In this paper, boron nitride (BN) films were deposited on silicon substrates by RF magnetron sputtering under different bias voltages. Microstructure and piezoelectric properties of BN films were characterized by FTIR, SEM, AFM and PFM. The results show that surface of films are of lower roughness, while the highest cubic phase volume fraction appeared (about 95%) under bias voltage 120V. And the deposited c-BN films are of apparent piezoelectric properties both in plane and vertical direction by PFM figures.
Keywords :
atomic force microscopy; boron compounds; nanoelectronics; pulse frequency modulation; scanning electron microscopy; semiconductor thin films; sputtering; AFM; FTIR; PFM; RF magnetron sputtering; SEM; c-boron nitride nanofilms; cubic phase volume fraction; different bias voltages; microstructure; piezoelectric devices; piezoelectric properties; voltage 120 V; Films; Morphology; Piezoelectric devices; Silicon; Surface morphology; Surface topography; Surface treatment; FTIR and PFM; bias voltage; c-BN; sputtering;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6465950
