DocumentCode :
597560
Title :
Characterization of MIM diodes based on Nb/ Nb2O5
Author :
Hashem, Islam E. ; Rafat, Nadia H. ; Soliman, Ezzeldin A.
Author_Institution :
Dept. of Eng. Math. & Phys., Cairo Univ., Giza, Egypt
fYear :
2013
fDate :
2-4 Jan. 2013
Firstpage :
61
Lastpage :
64
Abstract :
MIM diodes based on Nb/Nb2O5 are analyzed. The tunneling probability calculation is based on the transfer matrix method and the non equilibrium green´s function. Contour plots are presented showing the effect of the oxide thickness and the work function difference between the left metal electrode, Nb and the right metal electrode on the diode resistance, responsivity, and non linearity. Also, the total rectenna efficiency is analyzed for various MIM structures.
Keywords :
Green´s function methods; MIM devices; diodes; niobium; rectennas; transfer function matrices; tunnelling; MIM diodes characterization; MIM structures; Nb-Nb2O5; contour plots; diode resistance; left metal electrode; metal insulator metal diodes; nonequilibrium green function; nonlinearity; oxide thickness; responsivity; right metal electrode; total rectenna efficiency; transfer matrix method; tunneling probability calculation; work function difference; Electrodes; Insulators; Niobium; Rectennas; Resistance; Tunneling; MIM; Rectenna; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
ISSN :
2159-3523
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
Type :
conf
DOI :
10.1109/INEC.2013.6465954
Filename :
6465954
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=597560
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