Characterization of MIM diodes based on Nb/ Nb2O5

Author

Hashem, Islam E. ; Rafat, Nadia H. ; Soliman, Ezzeldin A.

Author_Institution

Dept. of Eng. Math. & Phys., Cairo Univ., Giza, Egypt

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

61

Lastpage

64

Abstract

MIM diodes based on Nb/Nb₂O₅ are analyzed. The tunneling probability calculation is based on the transfer matrix method and the non equilibrium green´s function. Contour plots are presented showing the effect of the oxide thickness and the work function difference between the left metal electrode, Nb and the right metal electrode on the diode resistance, responsivity, and non linearity. Also, the total rectenna efficiency is analyzed for various MIM structures.

Keywords

Green´s function methods; MIM devices; diodes; niobium; rectennas; transfer function matrices; tunnelling; MIM diodes characterization; MIM structures; Nb-Nb₂O₅; contour plots; diode resistance; left metal electrode; metal insulator metal diodes; nonequilibrium green function; nonlinearity; oxide thickness; responsivity; right metal electrode; total rectenna efficiency; transfer matrix method; tunneling probability calculation; work function difference; Electrodes; Insulators; Niobium; Rectennas; Resistance; Tunneling; MIM; Rectenna; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6465954

Filename

6465954