Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs

Author

Hsu, H.W. ; Huang, H.S. ; Chen, Song Yan ; Wang, Michael C. ; Li, K.C. ; Lin, Kate Ching-Ju ; Liu, Chi Harold

Author_Institution

Inst. of Mechatron. Eng., Nat. Taipei Univ. of Technol. (NTUT), Taipei, Taiwan

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

89

Lastpage

90

Abstract

In this study, the nMOSFETs with contact-etch-stop-layer (CESL) stressor and SiGe channel have been fabricated with a modified 90-nm technology. The performance of nMOSFETs and stress distribution in the channel region have been investigated. The hot carrier reliability of the SiGe-channeled nMOSFETs with various CESL nitride layers has also been extensively studied. In addition, the impact of stress induced by CESL stressor and SiGe-channel on hot-carrier reliability of the strained nMOSFETs has been analyzed through experimental measurements and stress simulation results.

Keywords

Ge-Si alloys; MOSFET; hot carriers; semiconductor device reliability; CESL nitride layers; CESL stressor; channel region; contact-etch-stop-layer stressor; hot carrier reliability; silicon germanium channel; size 90 nm; strained nMOSFET; stress distribution; stress impact; Educational institutions; Hot carriers; MOSFETs; Reliability; Silicon germanium; Strain; Stress; Contact-etch-stop-layer (CESL); SiGe channel; hot carrier reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6465962

Filename

6465962