Self-consistent quasi static CV characterization of InxGa1−xSb buried channel n-MOSFET

Author

Islam, Md Shariful ; Alam, Md Nur Kutubul ; Islam, Md Rafiqul

Author_Institution

Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

94

Lastpage

96

Abstract

The quasi-static capacitance-voltage (CV) characteristics of buried channel n-InGaSb MOSFET is investigated using SILVACO´s ATLAS device simulation package. Self-consistent method is applied to solve the coupled one dimensional Schrödinger-Poisson equation taking into account of wave function penetration and strain effect. It is found that the CV profiles and threshold voltage are strongly depended on some important process parameters like oxide thickness, channel thickness, channel composition and temperature for buried channel InGaSb n-MOSFET.

Keywords

MOSFET; Poisson equation; Schrodinger equation; gallium compounds; indium compounds; In_xGa_1-xSb; SILVACO ATLAS device simulation package; buried channel n-MOSFET; channel thickness; one dimensional Schrodinger-Poisson equation; oxide thickness; self-consistent quasi static CV characterization; strain effect; threshold voltage; wave function penetration; Capacitance; Logic gates; MOSFET circuits; Materials; Performance evaluation; Strain; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6465964

Filename

6465964