The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs

Author

Li Yuan ; Weizhu Wang ; Kean Boon Lee ; Haifeng Sun ; Selvaraj, S.L. ; Xing Zhou ; Guo-Qiang Lo

Author_Institution

Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

115

Lastpage

118

Abstract

In this work, the temperature dependent TCAD and SPICE modeling platform of AlGaN/GaN HEMTs has been established by using Sentaurus TCAD and Silvaco UTMOST IV. Typically, the temperature co-efficient of series resistance, trans-conductance, sub-threshold swing and gate/buffer leakage has been extracted from the TCAD simulation. Based on that, the compact SPICE device model of HEMTs has been built up, which can be used for DC/transient SPICE simulation and power electronics circuit demonstration. The SPICE modeling results agree well with our TCAD simulation, indicating good revealing of the physical mechanisms of the AlGaN/GaN HEMTs´ operation.

Keywords

III-V semiconductors; SPICE; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; technology CAD (electronics); wide band gap semiconductors; DC-transient SPICE simulation; HEMT; Sentaurus TCAD; Silvaco UTMOST IV; TCAD simulation; compact SPICE device model; gate-buffer leakage; power electronic circuit demonstration; series resistance; subthreshold swing; temperature coefficient; temperature-dependent TCAD modeling; transconductance; Conferences; Decision support systems; Hafnium; Nanoelectronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6465971

Filename

6465971