Critical thickness of diamond-like carbon study using X-ray photoelectron spectroscopy depth profiling

Author

Khamnaulthong, N. ; Siangchaew, K. ; Limsuwan, P.

Author_Institution

Dept. of Phys., King Mongkut´´s Univ. of Technol. Thonburi, Bangkok, Thailand

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

122

Lastpage

123

Abstract

A bi-layer stack of ion-beam sputtered Si-Si₃N₄ and tetrahedral amorphous diamond-like carbon made by filtered cathodic arc thin films were grown and heated to 200 °C at varying time to study the protective capability of diamond-like carbon film in preventing oxidation of underlying material. Depth profiling of such film by X-ray photoelectron spectroscopy showed that tetrahedral amorphous diamond-like carbon can slow down oxidation and with 1.0 nm thickness film can prevent Si-Si₃N₄ film from oxidizing when heated up to 200 °C.

Keywords

X-ray photoelectron spectra; amorphous state; diamond-like carbon; elemental semiconductors; ion beam effects; oxidation; semiconductor thin films; silicon; silicon compounds; sputter deposition; C; Si-Si₃N₄; X-ray photoelectron spectroscopy; bi-layer stack; critical thickness; depth profiling; filtered cathodic arc thin films; ion-beam sputtering; oxidation; size 1.0 nm; temperature 200 degC; tetrahedral amorphous diamond-like carbon; Adhesives; Atomic layer deposition; Diamond-like carbon; Films; Heating; Oxidation; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6465973

Filename

6465973