Improved resistance memory characteristics and switching mechanism using TiN electrode on TaOx/W structure

Improvement in the resistive switching characteristics using TiN bottom electrode on TaO_x/W structure as compared to W electrode is reported. The thickness of TaO_x layer is confirmed by high-resolution TEM image. The memory device with TiN electrode has shown formation-free repeatable bipolar resistive switching with resistance ratio of >30. Besides, improved resistive switching performance in terms of lower operation current (50 vs. 300 μA), Longer read endurance (>10⁵ cycles), 85°C data retention of >10⁴ seconds and device yield of >90% is also achieved for TiN electrode. The TiN/TaO_x interface is playing a key role in controlling the oxygen vacancy defects which in turn control the formation/dissolution of conducting filament.