DocumentCode :
597579
Title :
Simulation of grading double hetero-junction non-polar InGaN solar cell
Author :
Hsun-Wen Wang ; Pei-Chen Yu ; Hau-Vei Han ; Chien-Chung Lin ; Hao-Chung Kuo ; Shiuan-Huei Lin
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2013
fDate :
2-4 Jan. 2013
Firstpage :
143
Lastpage :
145
Abstract :
In this study, the characteristics of non-polar double heterojunction GaN/ InxGa1-xN solar cells with various indium contents are numerically investigated under AM 1.5 global spectrum using finite element analysis. By smoothing the interface band edge offset with graded junction, we see the enhancement on short circuit current and power conversion efficiency. The maximum efficiency of the simulation results reached 24.32 % when the major absorption region contains 65% of indium composition.
Keywords :
III-V semiconductors; finite element analysis; gallium compounds; indium compounds; power conversion; semiconductor heterojunctions; short-circuit currents; solar cells; wide band gap semiconductors; InGaN; finite element analysis; global spectrum; graded junction; grading double heterojunction nonpolar solar cell; interface band edge offset; power conversion efficiency; short circuit current; Conferences; Decision support systems; Educational institutions; Electrooptical waveguides; Facsimile; Nanoelectronics; Photonics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
ISSN :
2159-3523
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
Type :
conf
DOI :
10.1109/INEC.2013.6465979
Filename :
6465979
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=597579
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