• DocumentCode
    597580
  • Title

    Optical properties of Si/SiO2 and GaAs/AlOx sub-wavelength HCG mirrors on GaAs substrate and an impact of structural imperfections on their performance

  • Author

    Gebski, Marcin ; Dems, M. ; Jian Chen ; Wang Qijie ; Zhang Dao Hua ; Czyszanowski, T.

  • Author_Institution
    Inst. of Phys., Lodz Univ. of Technol., Lodz, Poland
  • fYear
    2013
  • fDate
    2-4 Jan. 2013
  • Firstpage
    146
  • Lastpage
    149
  • Abstract
    In order to obtain low threshold VCSELs high reflectivity mirrors are crucial in their designs. Typically used Distribute Bragg Reflectors (DBR) provide reflectivity over 99.8% in the spectral range of 70 nm. To achieve polarization control numerous of shallow etchings approaches has been proposed but already lastly developed High Contrast Grating (HCG) has an ability to discard one of the mode polarization completely and additionally to provide twice broader spectrum of large reflectivity. We present simulation results of various HCG structures based on Si and GaAs high index materials combined with SiO2 and AlOx cladding low index material layers respectively. Reflectivity simulations at 980nm wavelength show that reflectivity exceeding 99.8% can be obtained in a broad range of grating parameters. Additionally the same parameters assure very strong discrimination between TE and TM modes. Manufacturing process of a grating might involve undesirable imperfections leading to deterioration of optical properties of HCG. Hence we consider error analysis assuming random nonperiodicity of a grating structure based on Gaussian distribution of manufacture inaccuracy with standard deviation as inaccuracy measure varying from 0 nm to 50 nm. We found that inaccuracy in the range 0 nm-25 nm does not deteriorates significantly the reflection of HCG.
  • Keywords
    Gaussian distribution; diffraction gratings; distributed Bragg reflector lasers; error analysis; gallium arsenide; laser mirrors; reflectivity; semiconductor lasers; silicon; silicon compounds; surface emitting lasers; GaAs; GaAs-AlOx; Gaussian distribution; Si-SiO2; error analysis; high contrast grating; high index materials; high reflectivity mirrors; low index material layers; low threshold VCSEL; polarization control; subwavelength HCG mirrors; Conferences; Decision support systems; Nanoelectronics; HCG; manufacturing imperfections; numerical methods;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2013 IEEE 5th International
  • Conference_Location
    Singapore
  • ISSN
    2159-3523
  • Print_ISBN
    978-1-4673-4840-9
  • Electronic_ISBN
    2159-3523
  • Type

    conf

  • DOI
    10.1109/INEC.2013.6465980
  • Filename
    6465980