Fully CMOS compatible 1T1R integration of vertical nanopillar GAA transistor and Oxide based RRAM cell for high density nonvolatile memory application

Fully CMOS compatible vertical nanopillar GAA transistor integrated with Oxide based RRAM cell to realize 4F² footprint has been demonstrated and systematically characterized. Nanopillar transistor exhibits excellent transfer characteristics with diameter down to a few tens nanometer. Three type of resistive switching behavior have been found in the fabricated 1T1R cell, namely pre-forming ultralow current switching, unipolar switching and bipolar switching after forming process. Reset current of only 200pA has been observed in pre-forming ultralow current switching; while for unipolar and bipolar switching after forming process, good memory performance and operation parameter uniformity is demonstrated. Furthermore, reset current is found to decrease with reducing nanopillar transistor design diameter, which is beneficial for circuit power consumption concern.