Superior resistive switching characteristics of Cu-TiO2 based RRAM cell

The random access memory (RRAM) cells consisted with the Cu doped TiO₂ film and both Pt inert electrodes has been purposed. Compared with the common conductive-bridging mode sample structure which have a Cu active electrode, a non-doped TiO₂ film and a Pt inert electrode. The Cu doped film with both inert electrodes sample exhibited the endurance of 1000 cycles more than the common ones of 400 cycles under the same operating conditions. Furthermore, the doped sample required lower setting voltage of -0.7V than the common ones of -1.5V. The differences in resistance resistive switching characteristics were possible caused by the amounts of Cu ions distribution and the forming of the conductive filaments in the TiO₂ layers, according the results of the electrical characteristics measurements and the material analysis.