DocumentCode
597602
Title
High sensing performance of fluorinated HfO2 membrane by low damage CF4 plasma treatment for K+ detections
Author
Chi-Hsien Huang ; I-Shun Wang ; Kuan-I Ho ; Tzu-Wen Chiang ; Chien Chou ; Chu-Fa Chang ; Chao-Sung Lai
Author_Institution
Chang Gung Univ., Taoyuan, Taiwan
fYear
2013
fDate
2-4 Jan. 2013
Firstpage
261
Lastpage
262
Abstract
A low damage CF4 plasma with a filter in a PECVD system was proposed to incorporate fluorine atoms into an HfO2 sensing membrane in an EIS structure for K+ ion sensor application. The highest sensitivities of 82mV/pK was obtained when the low damage plasma treatment with RF power of 100W was used for 30min. Compared with the conventional CF4 plasma, the sensitivity significantly improved. The reasons were the high polarization induced by fluorine atoms and elimination of plasma damage.
Keywords
chemical sensors; electrolytes; hafnium compounds; plasma CVD; polarisation; potassium; EIS structure; HfO2; K+; K+ ion sensor; PECVD; damage CF4 plasma; damage plasma treatment; electrolyte insulator semiconductor; filter; fluorinated membrane; fluorine atom; polarization; power 100 W; Biomembranes; Hafnium compounds; Ions; Plasmas; Radio frequency; Sensitivity; Sensors; CF4 plasma; HfO2 ; electrolyte-insulator-semiconductor (EIS); ion sensor; low damage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location
Singapore
ISSN
2159-3523
Print_ISBN
978-1-4673-4840-9
Electronic_ISBN
2159-3523
Type
conf
DOI
10.1109/INEC.2013.6466017
Filename
6466017
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