Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressor

The embedded SiGe source/drain stressor helpful to promote the drive current involves etching out the source/drain silicon and replacing it with SiGe filler. This process uses the lattice mismatch between silicon and germanium atoms making the silicon channel compressive. This compressive stress enhances hole mobility, and the pMOSFET performance can be enhanced. In this study, the characteristics of devices contained biaxial strain in channel and embedded SiGe source/drain stressor with different channel lengths and the channel hot carrier (CHC) in short channel pMOSFETs was explored, too.