Title :
Retention behavior of graphene oxide resistive switching memory on flexible substrate
Author :
Fang Yuan ; Yu-Ren Ye ; Jer-Chyi Wang ; Zhigang Zhang ; Liyang Pan ; Jun Xu ; Chao-Sung Lai
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
This work presents a flexible carbon based memory with the Al/graphene oxide (GO)/ITO structure fabricated at room temperature. The Al/GO/ITO devices show the unipolar resistive switching behavior with the resistance ratio to over 30, and sustain over 250 cycling without any resistance window closure. However, the retention fails due to the resistance increase of low resistance state (LRS). The mechanisms of switching and retention failure are studied.
Keywords :
aluminium; electrical resistivity; flexible electronics; graphene; semiconductor storage; semiconductor switches; Al-CO-ITO; LRS; ReRAM; flexible carbon based memory; flexible substrate; graphene oxide resistive switching memory; low resistance state; resistance ratio; retention behavior; retention failure; temperature 293 K to 298 K; unipolar resistive switching behavior; Films; Graphene; Indium tin oxide; Mechanical factors; Resistance; Substrates; Switches; RRAM; graphene oxide; resistive switching; retention; unipolar;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6466025
