Bipolar resistive switching characteristics in Si3N4-based RRAM with MIS (Metal-Insulator-Silicon) structure

Author

Sungjun Kim ; Sunghun Jung ; Jeong-Hoon Oh ; Kyung-Chang Ryoo ; Byung-Gook Park

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

303

Lastpage

305

Abstract

In this paper, bipolar resistive switching was investigated in our fabricated Ti/Si₃N₄/p⁺-Si resistive random access memory (RRAM) devices. Heavily doped p-type Si was used instead of a conventional bottom electrode (BE) using metal such as Pt. We found that forming-free process, self-compliance and gradual reset were shown in this device. The operation voltage was with 1.8~3.5 V during set process due to forming-free process. And self-compliance was observed by restriction of parasitic resistance without external current limiter. Finally, multi-level cell (MLC) feasibility was achieved using voltage stop during gradual reset.

Keywords

MIS structures; random-access storage; silicon compounds; titanium; MIS structure; RRAM; Ti-Si₃N₄; bipolar resistive switching; bottom electrode; current limiter; forming-free process; gradual reset; multi-level cell; parasitic resistance; self-compliance; voltage 1.8 V to 3.5 V; Electrodes; Flash memory; Metals; Resistance; Silicon; Switches; MIS structure); Si3N4 based RRAM;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6466030

Filename

6466030