Title :
Long-wavelength III-V quantum-dot lasers monolithically grown on Si substrates
Author :
Qi Jiang ; Lee, Albert ; Mingchu Tang ; Seeds, A. ; Huiyun Liu
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
Abstract :
Although great effort have been devoted for Si-based light generation and modulation technologies since the 1980s, monolithic growth of electrically pumped laser on Si remains the `holy grail´ for Si photonics. In this paper, room temperature lasing near the telecom wavelength of 1300 nm has been demonstrated at room temperature with low threshold current densities for InAs/GaAs quantum-dot lasers grown on both Si and Ge substrates.
Keywords :
III-V semiconductors; current density; elemental semiconductors; gallium arsenide; germanium; indium compounds; quantum dot lasers; semiconductor growth; silicon; Ge; InAs-GaAs; Si; current densities; electrically pumped laser; long-wavelength III-V quantum-dot lasers; modulation technologies; monolithic growth; room temperature lasing; silicon photonics; silicon-based light generation; temperature 293 K to 298 K; Gallium arsenide; Photonics; Quantum dot lasers; Silicon; Substrates; Threshold current; 1300 nm laser diodes; III-V/Si integration; Quantum dots; Silicon photonics; molecular beam epitaxy;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6466039
