DocumentCode :
597616
Title :
6.5 nm-thick Al2O3 Surface passivated layer grown on two stacks of 10-period InGaAs and GaAs-capped InAs Quantum Dot Infrared Photodetector Focal Plane Arrays for high temperature operation
Author :
Shiang-Feng Tang ; Tzu-Chiang Chen ; Wen-Jen Lin ; Shih-Yen Lin
Author_Institution :
Mater. & Electro-Opt. Div., Chung-Shan Inst. of Sci. & Technol., Taoyuan, Taiwan
fYear :
2013
fDate :
2-4 Jan. 2013
Firstpage :
342
Lastpage :
345
Abstract :
The study is to demonstrate a dual-band infrared images based on two stacked InGaAs and GaAs-capped InAs QDIP structure, with the use of nano-scale Al2O3 surface passivated layer by ALD system deposited to decrease the device shot noise and boost the operation temperature of the thermal imaging FPA to 180 K.
Keywords :
III-V semiconductors; aluminium compounds; focal planes; gallium arsenide; indium compounds; infrared detectors; infrared imaging; photodetectors; quantum dots; Al2O3; InAs; InGaAs; dual-band infrared images; high temperature operation; nanoscale surface passivated layer; quantum dot infrared photodetector focal plane array; size 6.5 nm; temperature 180 K; Aluminum oxide; Detectors; Gallium arsenide; Indium gallium arsenide; Photodetectors; Quantum dots; Temperature measurement; Atomic Layer-Deposition (ALD); Cross-Sectional Transmission Electron Microscopy (XTEM). Photo-Enhanced Vapor Deposition (PVD); Focal Plane Arrays (FPAs); Molecular Beam Epitaxy (MBE); Quantum Dot Infrared Photodetectors (QDIPs);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
ISSN :
2159-3523
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
Type :
conf
DOI :
10.1109/INEC.2013.6466042
Filename :
6466042
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=597616
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