6.5 nm-thick Al2O3 Surface passivated layer grown on two stacks of 10-period InGaAs and GaAs-capped InAs Quantum Dot Infrared Photodetector Focal Plane Arrays for high temperature operation

Author

Shiang-Feng Tang ; Tzu-Chiang Chen ; Wen-Jen Lin ; Shih-Yen Lin

Author_Institution

Mater. & Electro-Opt. Div., Chung-Shan Inst. of Sci. & Technol., Taoyuan, Taiwan

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

342

Lastpage

345

Abstract

The study is to demonstrate a dual-band infrared images based on two stacked InGaAs and GaAs-capped InAs QDIP structure, with the use of nano-scale Al₂O₃ surface passivated layer by ALD system deposited to decrease the device shot noise and boost the operation temperature of the thermal imaging FPA to 180 K.

Keywords

III-V semiconductors; aluminium compounds; focal planes; gallium arsenide; indium compounds; infrared detectors; infrared imaging; photodetectors; quantum dots; Al₂O₃; InAs; InGaAs; dual-band infrared images; high temperature operation; nanoscale surface passivated layer; quantum dot infrared photodetector focal plane array; size 6.5 nm; temperature 180 K; Aluminum oxide; Detectors; Gallium arsenide; Indium gallium arsenide; Photodetectors; Quantum dots; Temperature measurement; Atomic Layer-Deposition (ALD); Cross-Sectional Transmission Electron Microscopy (XTEM). Photo-Enhanced Vapor Deposition (PVD); Focal Plane Arrays (FPAs); Molecular Beam Epitaxy (MBE); Quantum Dot Infrared Photodetectors (QDIPs);

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6466042

Filename

6466042