DocumentCode :
597617
Title :
Device modeling and optimization of high- performance thin film CIGS solar cell with MgxZn1−xO buffer layer
Author :
Pandey, S.K. ; Mukherjee, Sayan
Author_Institution :
Hybrid Nanodevice Res. Group (HNRG), Indian Inst. of Technol., Indore, Indore, India
fYear :
2013
fDate :
2-4 Jan. 2013
Firstpage :
353
Lastpage :
356
Abstract :
A comprehensive device modeling for thin film CIGS-based solar cell with MgZnO buffer layer has been performed. The effects of thickness, doping, and alloy composition of various device constituent layers are extensively studied while optimizing device performance of the solar cell at room temperature. In this study, a maximum power conversion efficiency of 21.4% is achieved with performance parameters of 1.2V for open circuit voltage (Voc), 34.8 mA/cm2 of short circuit current density (Jsc) and a fill factor of 85.7%. Different aspects of constituent layer parameters thickness, doping, and alloy composition calibrations has been considered to identify the optimization criteria for the design of CIGS based solar cell.
Keywords :
II-VI semiconductors; buffer layers; copper compounds; current density; gallium compounds; indium compounds; magnesium compounds; power conversion; semiconductor device models; semiconductor doping; semiconductor thin films; short-circuit currents; solar cells; ternary semiconductors; thin film devices; wide band gap semiconductors; zinc compounds; Cu(InGa)Se2-MgxZn1-xO; alloy composition; buffer layer; comprehensive device modeling; constituent layer parameters thickness; doping; fill factor; high-performance thin film CIGS solar cell optimization; open circuit voltage; power conversion efficiency; room temperature; short circuit current density; temperature 293 K to 298 K; Anodes; Conferences; Current density; Mercury (metals); Nanoelectronics; CIGS; Photovoltaic (PV) cell; conversion efficiency; deep defect; modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
ISSN :
2159-3523
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
Type :
conf
DOI :
10.1109/INEC.2013.6466045
Filename :
6466045
Link To Document :
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