Device modeling and optimization of high- performance thin film CIGS solar cell with MgxZn1−xO buffer layer

Author

Pandey, S.K. ; Mukherjee, Sayan

Author_Institution

Hybrid Nanodevice Res. Group (HNRG), Indian Inst. of Technol., Indore, Indore, India

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

353

Lastpage

356

Abstract

A comprehensive device modeling for thin film CIGS-based solar cell with MgZnO buffer layer has been performed. The effects of thickness, doping, and alloy composition of various device constituent layers are extensively studied while optimizing device performance of the solar cell at room temperature. In this study, a maximum power conversion efficiency of 21.4% is achieved with performance parameters of 1.2V for open circuit voltage (V_oc), 34.8 mA/cm² of short circuit current density (J_sc) and a fill factor of 85.7%. Different aspects of constituent layer parameters thickness, doping, and alloy composition calibrations has been considered to identify the optimization criteria for the design of CIGS based solar cell.

Keywords

II-VI semiconductors; buffer layers; copper compounds; current density; gallium compounds; indium compounds; magnesium compounds; power conversion; semiconductor device models; semiconductor doping; semiconductor thin films; short-circuit currents; solar cells; ternary semiconductors; thin film devices; wide band gap semiconductors; zinc compounds; Cu(InGa)Se₂-Mg_xZn_1-xO; alloy composition; buffer layer; comprehensive device modeling; constituent layer parameters thickness; doping; fill factor; high-performance thin film CIGS solar cell optimization; open circuit voltage; power conversion efficiency; room temperature; short circuit current density; temperature 293 K to 298 K; Anodes; Conferences; Current density; Mercury (metals); Nanoelectronics; CIGS; Photovoltaic (PV) cell; conversion efficiency; deep defect; modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6466045

Filename

6466045