• DocumentCode
    597619
  • Title

    High frequency SAW nanotransducer utilizing ultrananocrystalline diamond/ A1N bimorph architecture

  • Author

    Dow, A.B.A. ; Lin, Huiming ; Popov, C. ; Schmid, Ulrich ; Kherani, Nazir P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada
  • fYear
    2013
  • fDate
    2-4 Jan. 2013
  • Firstpage
    360
  • Lastpage
    363
  • Abstract
    This article reports on the development and realization of a super high frequency surface acoustic wave (SAW) nanotranducer architecture based on a bi-layer of aluminum nitride (AlN) and ultrananocrystalline diamond (UNCD). The SAW nanotransducer was fabricated on an AlN/UNCD structure using electron beam lithography and lift off processes. The SAW device consists of nano inter-digitated transducers (n-IDTs) at both the input and output ports. The fabricated devices exhibited response over a high frequency range, as high as 18.4 GHz, with minimal insertion losses. The good frequency characteristics of the fabricated devices and compatibility with existing fabrication technologies open the way for the realization of advanced AlN/UNCD based transducers.
  • Keywords
    aluminium compounds; diamond; electron beam lithography; nanoelectronics; nanostructured materials; surface acoustic wave transducers; AlN; SAW device; SAW nanotranducer architecture; UNCD; aluminum nitride bilayer; bimorph architecture; electron beam lithography; fabricated devices; fabrication technology; frequency characteristics; high frequency SAW nanotransducer; high frequency range; lift off processes; minimal insertion losses; nano interdigitated transducers; super high frequency surface acoustic wave nanotransducer architecture; ultrananocrystalline diamond; Diamonds; Fabrication; Films; Nanobioscience; Sensors; Surface acoustic wave devices; Surface acoustic waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2013 IEEE 5th International
  • Conference_Location
    Singapore
  • ISSN
    2159-3523
  • Print_ISBN
    978-1-4673-4840-9
  • Electronic_ISBN
    2159-3523
  • Type

    conf

  • DOI
    10.1109/INEC.2013.6466047
  • Filename
    6466047