Hump phenomenon in transfer characteristics of double-gated thin-body Tunneling Field-Effect Transistor (TFET) with gate/source overlap

Most of research groups have studied on Tunneling Field-Effect Transistors (TFETs) with assumption that there are no gate/source overlap and abrupt source/channel junction. In this work, we study the electrical characteristics of double-gated thin-body TFET with gate/source overlap and no abrupt source/channel junction. From transfer characteristics, hump phenomenon occurring with increasing gate bias is observed. This phenomenon affects the threshold voltage (V_TH), which worsens device matching and also makes it difficult to design logic circuits. The reason why tunneling current is suddenly increased is due to tunneling components in a direction normal to the channel. Theses hump phenomena are not seen in the previous TFET study using unidirectional nonlocal band-to-band tunneling model.