Resonant cavity far infrared photo-detector based on self-assembled InAs/GaAs quantum dots

Author

Negi, C.M.S. ; Kumar, Dinesh ; Gupta, Suneet K. ; Kumar, Jayant

Author_Institution

Dept. of Electron., Banasthali Univ., Vanasthali, India

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

407

Lastpage

410

Abstract

In this paper, a novel design for far infrared resonant cavity enhanced quantum dot photo-detector (RCE QDP) based on bound-to-bound intervalence subband transitions in self assembled InAs/GaAs quantum dots (QDs) is presented. The device structure consists of QDs active layers inserted between two distributed Bragg reflectors (DBRs). Quantum efficiency is calculated as a function of wavelength for different reflectivity of mirrors. Dark current is calculated as a function of the voltage for different value of temperature and QD radius.

Keywords

III-V semiconductors; distributed Bragg reflectors; gallium arsenide; indium compounds; infrared detectors; micro-optics; photodetectors; quantum dots; self-assembly; InAs-GaAs; RCE QDP; bound-to-bound intervalence subband transitions; distributed Bragg reflectors; mirror reflectivity; quantum efficiency; resonant cavity enhanced quantum dot photodetector; resonant cavity far infrared photodetector; self-assembled quantum dots; Cavity resonators; Dark current; Finite impulse response filter; Gallium arsenide; Photodetectors; Quantum dots; Tunneling; Resonant cavity; dark current; intersubband transitions; quantum dot photodetector; quantum efficiency; valance subband structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6466062

Filename

6466062