DocumentCode
597638
Title
Modeling of the nipip HIT structure with the hole thermionic emission mechanism
Author
Hsiao, H.-T. ; Kuo, T.-Y. ; Lin, Chia-Hung
Author_Institution
Dept. of Opto-Electron. Eng., Nat. Dong Hwa Univ., Hualien, Taiwan
fYear
2013
fDate
2-4 Jan. 2013
Firstpage
428
Lastpage
430
Abstract
We will show the current-voltage behaviors and band diagrams of HIT cells with and without hole thermionic emission model. When the hole thermionic emission model is not included, only drift diffusion model is used. In such a case, the calculated current would be much larger than the practical value.
Keywords
solar cells; thermionic emission; HIT cells; band diagrams; current-voltage behaviors; drift diffusion model; hole thermionic emission mechanism; hole thermionic emission model; nipip HIT structure; Conferences; Current density; Educational institutions; Heterojunctions; Nanoelectronics; Photovoltaic cells; Thermionic emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location
Singapore
ISSN
2159-3523
Print_ISBN
978-1-4673-4840-9
Electronic_ISBN
2159-3523
Type
conf
DOI
10.1109/INEC.2013.6466068
Filename
6466068
Link To Document